STP80N450K6

STMicroelectronics
511-STP80N450K6
STP80N450K6

製造商：

說明：
MOSFET N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET
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庫存量: 229

庫存：
229 可立即送貨
工廠前置作業時間：
13 週 工廠預計生產時間數量大於所顯示的數量。
數量超過229會受到最小訂單要求的限制。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$36.33 HK$36.33
HK$19.56 HK$195.60
HK$17.67 HK$1,767.00
HK$14.55 HK$7,275.00
HK$13.40 HK$13,400.00
HK$13.07 HK$32,675.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
10 A
450 mOhms
Enhancement
Tube
品牌: STMicroelectronics
產品類型: MOSFETs
原廠包裝數量: 50
子類別: Transistors
每件重量: 2 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STP80N450K6 800V N-Channel Power MOSFET

STMicroelectronics STP80N450K6 800V N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. This technology is based on 20 years of STMicroelectronics experience in super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

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