DMTH6005 N-Channel Enhancement Mode MOSFETs

Diodes Inc. DMTH6005 N-channel Enhance Mode MOSFETs minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. The DMTH6005 MOSFETs offer a maximum of 5.5mΩ @ VGS = 10V RDS(ON), a drain-source breakdown voltage of 60V, and 100% unclamped inductive switching. Rated at 175ºC, these MOSFETs are ideal for high ambient temperature environments. DMTH6005LPSQ is automotive qualified to AEC-Q101 and supports PPAP. Applications for the DMTH6005 MOSFETs include high-frequency switching, synchronous rectification, and DC-DC converters.

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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 封裝
Diodes Incorporated MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A 2,679庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 60 V 100 A 10 mOhms - 20 V, 20 V 1 V 47.1 nC - 55 C + 175 C 150 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V 30庫存量
最少: 1
倍數: 1
Si Through Hole TO-220-3 Tube
Diodes Incorporated MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A 1,904庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 60 V 20.6 A 5.5 mOhms - 20 V, 20 V 1 V 47.1 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 5,826庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 90 A 5.6 mOhms - 20 V, 20 V 1 V 47.1 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V 1,327庫存量
2,500預期15/7/2026
最少: 1
倍數: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 90 A 5.6 mOhms - 20 V, 20 V 3 V 47.1 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel