NVBG025N065SC1

onsemi
863-NVBG025N065SC1
NVBG025N065SC1

製造商:

說明:
碳化矽MOSFET SIC MOS D2PAK-7L 650V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 68

庫存:
68 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
數量超過68會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$214.13 HK$214.13
HK$168.35 HK$1,683.50
HK$168.10 HK$16,810.00
HK$165.72 HK$82,860.00
完整捲(訂購多個800)
HK$160.21 HK$128,168.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-7
N-Channel
1 Channel
650 V
106 A
28.5 mOhms
- 8 V, + 22 V
4.3 V
164 nC
- 55 C
+ 175 C
395 W
Enhancement
EliteSiC
品牌: onsemi
配置: Single
下降時間: 8 ns
互導 - 最小值: 27 S
封裝: Reel
封裝: Cut Tape
產品類型: SiC MOSFETS
上升時間: 19 ns
系列: NVBG025N065SC1
原廠包裝數量: 800
子類別: Transistors
技術: SiC
標準斷開延遲時間: 32 ns
標準開啟延遲時間: 17 ns
找到產品:
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NVBG025N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVBG025N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVBG025N065SC1 features low ON resistance and a compact chip size that ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).