RF3L05150CB4

STMicroelectronics
511-RF3L05150CB4
RF3L05150CB4

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說明：
RF MOSFET晶體管 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
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庫存：
暫無庫存
工廠前置作業時間：
此產品已報告長備貨期。
最少： 100   多個： 100
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
完整捲（訂購多個100）
HK$1,226.75 HK$122,675.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: RF MOSFET晶體管
RoHS:  
N-Channel
Si
2.5 A
28 V
1 Ohms
945 MHz
16 dB
150 W
+ 200 C
Through Hole
LBB-4
Reel
品牌: STMicroelectronics
通道數: 1 Channel
產品類型: RF MOSFET Transistors
原廠包裝數量: 100
子類別: MOSFETs
類型: RF Power MOSFET
每件重量: 2.400 g
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所選屬性: 0

規格書

USHTS:
8541290055
TARIC:
8541290000
ECCN:
EAR99

RF3L05150CB4 RF Power LDMOS Transistor

STMicroelectronics RF3L05150CB4 RF Power LDMOS Transistor is a 150W, 28/32V LDMOS FET designed for wide-band communication and ISM applications. The STM RF3L05150CB4 LDMOS Transistor is designed for applications with frequencies from HF to 1GHz. The RF3L05150CB4 can be used in class AB, B, or C for all typical modulation formats.

LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

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