STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.

所有結果 (2)

選擇以下類別以檢視篩選選項和縮小搜尋範圍。
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS
STMicroelectronics 閘極驅動器 High voltage and high-speed half-bridge gate driver for GaN power switches 613庫存量
最少: 1
倍數: 1
: 3,000
STMicroelectronics STDRIVEG212Q
STMicroelectronics STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches 暫無庫存
最少: 4,900
倍數: 4,900