Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

結果: 20
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式
APC-E 碳化矽MOSFET 650V 50mR, TO-247-4L, Industrial Grade 288庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E 碳化矽MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E 碳化矽MOSFET 1200V 75mR, TO-247-4L, Industrial Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E 碳化矽MOSFET 650V 50mR, TO-247-4L, Automotive Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E 碳化矽MOSFET 650V 27mR, TO-247-4L, Automotive Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E 碳化矽MOSFET 1200V 30mR, TO-247-4L, Automotive Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E 碳化矽MOSFET 1200V 13mR, TO247-4L, Industrial Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E 碳化矽MOSFET 1200V 13mR, TO247-4L, Automotive Grade 300庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E 碳化矽MOSFET 650V 27mR, SAPKG-9L, Automotive Grade
600預期28/8/2026
最少: 1
倍數: 1
: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E 碳化矽MOSFET 650V 35mR, TO-247-4L, Automotive Grade
300預期3/4/2026
最少: 1
倍數: 1

Through Hole TO-247-4L 650 V
APC-E 碳化矽MOSFET 1200V 20mR, TO-247-4L, Industrial Grade
300預期3/4/2026
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E 碳化矽MOSFET 650V 27mR, TO-247-4L, Industrial Grade
300預期27/3/2026
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E 碳化矽MOSFET 1200V 30mR, TO-247-4L, Industrial Grade
300預期27/3/2026
最少: 1
倍數: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E 碳化矽MOSFET 650V 65mR, TO-247-3L, Automotive Grade
300預期1/5/2026
最少: 1
倍數: 1

Through Hole TO-247-3L 650 V
APC-E 碳化矽MOSFET 650V 35mR, TO-247-4L, Industrial Grade
300預期3/4/2026
最少: 1
倍數: 1

Through Hole TO-247-4L 650 V

APC-E 碳化矽MOSFET 650V 65mR, TO-247-3L, Industrial Grade
300預期1/5/2026
最少: 1
倍數: 1

Through Hole TO-247-3L 650 V
APC-E 碳化矽MOSFET 1700V 1000mR, TO247-3L, Industrial Grade
300預期27/3/2026
最少: 1
倍數: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E 碳化矽MOSFET 1200V 75mR, TO247-4L, Automotive Grade 無庫存前置作業時間 15 週
最少: 1
倍數: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E 碳化矽MOSFET 1200V 32mR, TO247-4L, Industrial Grade 無庫存前置作業時間 15 週
最少: 1
倍數: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E 碳化矽MOSFET 1200V 75mR, TO247-4L, Industrial Grade 無庫存前置作業時間 15 週
最少: 1
倍數: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C