IRF150DM115XTMA1

Infineon Technologies
726-IRF150DM115XTMA1
IRF150DM115XTMA1

製造商:

說明:
MOSFET IFX FET >100-150V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 858

庫存:
858 可立即送貨
工廠前置作業時間:
24 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$31.65 HK$31.65
HK$20.71 HK$207.10
HK$14.96 HK$1,496.00
HK$13.32 HK$6,660.00
HK$11.92 HK$11,920.00
HK$11.75 HK$29,375.00
完整捲(訂購多個4800)
HK$11.75 HK$56,400.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
WG-WDSON-5
N-Channel
1 Channel
150 V
60 A
11.3 mOhms
- 20 V, 20 V
3.8 V
33 nC
- 40 C
+ 150 C
78 W
Enhancement
OptiMOS DirectFET
Reel
Cut Tape
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: MX
下降時間: 14 ns
濕度敏感: Yes
產品類型: MOSFETs
上升時間: 21 ns
原廠包裝數量: 4800
子類別: Transistors
標準斷開延遲時間: 14 ns
標準開啟延遲時間: 11 ns
零件號別名: IRF150DM115 SP001511080
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所選屬性: 0

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USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

IRF150DM115 OptiMOS™ 5 150V MOSFET

Infineon Technologies IRF150DM115 OptiMOS™ 5 150V MOSFET is designed to optimize thermal design in order to achieve high power density and efficiency. This MOSFET offers a breakthrough reduction in RDS(on) (up to 25% compared to the alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS. This effectively reduces design effort while optimizing system efficiency. The IRF150DM115 MOSFET is available in a DirectFET™ package with OptiMOS™ 5. The double-side-cooled package with low parasitic inductance and profile design enables high power density designs. This OptiMOS 5 150V MOSFET is suitable for use in targeting power conversion in photovoltaic optimizers, cordless power tools, and motor control. Potential applications include solar micro-inverters, synchronous rectification, and DC-DC converters.