SIJ4108DP-T1-GE3

Vishay / Siliconix
78-SIJ4108DP
SIJ4108DP-T1-GE3

製造商:

說明:
MOSFET N-CHANNEL 100-V (D-S) MOSFET

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 10,073

庫存:
10,073 可立即送貨
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$18.50 HK$18.50
HK$12.25 HK$122.50
HK$8.88 HK$888.00
HK$7.09 HK$3,545.00
HK$6.88 HK$6,880.00
完整捲(訂購多個3000)
HK$5.70 HK$17,100.00

商品屬性 屬性值 選擇屬性
Vishay
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO-8
N-Channel
1 Channel
100 V
56.7 A
9 mOhms
- 20 V, 20 V
4 V
34.5 nC
- 55 C
+ 150 C
69.4 W
Enhancement
Reel
Cut Tape
品牌: Vishay / Siliconix
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 7 ns
互導 - 最小值: 70 S
產品類型: MOSFETs
上升時間: 8 ns
原廠包裝數量: 3000
子類別: Transistors
標準斷開延遲時間: 22 ns
標準開啟延遲時間: 18 ns
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.