TP65H035G4YS

Renesas Electronics
227-TP65H035G4YS
TP65H035G4YS

製造商：

說明：
氮化鎵場效應管 650V, 35mohm GaN FET in TO247-4L

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庫存：
暫無庫存
工廠前置作業時間：
26 週 工廠預計生產時間。
此產品已報告長備貨期。
最少： 1200   多個： 1200
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$43.65 HK$52,380.00

商品屬性 屬性值 選擇屬性
Renesas Electronics
產品類型: 氮化鎵場效應管
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
46.5 A
41 mOhms
- 20 V, + 20 V
3.6 V
42.7 nC
- 55 C
+ 150 C
156 W
Enhancement
SuperGaN
品牌: Renesas Electronics
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: JP
下降時間: 8 ns
封裝: Tube
產品: FETs
產品類型: GaN FETs
上升時間: 12.4 ns
系列: Gen IV SuperGaN
原廠包裝數量: 1200
子類別: Transistors
技術: GaN
晶體管類型: 1 N-Channel
類型: GaN FET
標準斷開延遲時間: 108 ns
標準開啟延遲時間: 43 ns
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所選屬性: 0

規格書

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

TP65H035G4YS 650V SuperGaN® FET

Renesas Electronics TP65H035G4YS 650V SuperGaN® Field Effect Transistor (FET) is a 35mΩ gallium nitride (GaN) FET offered in a four-lead TO-247 package. This normally off-device uses Renesas Electronics's Gen IV platform and combines a high-voltage GaN HEMT with a low-voltage silicon MOSFET, resulting in superior reliability and performance. The Gen IV SuperGaN platform utilizes advanced epi and patented design technologies to simplify manufacturability. The platform also improves efficiency over silicon via lower gate charge, crossover loss, output capacitance, and reverse recovery charge. This four-lead TP65H035G4YS SuperGaN device can be used as an original design-in option or as a drop-in replacement for four-lead silicon and SiC solutions supporting power supplies at 1kW and up. Ideal applications for the Renesas Electronics 650V SuperGaN FET include datacom, industrial, PV inverters, and servo motors.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

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