STGW100H65FB2-4

STMicroelectronics
511-STGW100H65FB2-4
STGW100H65FB2-4

製造商:

說明:
IGBT Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 42

庫存:
42 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
數量超過42會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$71.51 HK$71.51
HK$46.77 HK$467.70
HK$39.62 HK$3,962.00
HK$34.85 HK$20,910.00
HK$32.96 HK$39,552.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-247-4
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
145 A
441 W
- 55 C
+ 150 C
HB2
Tube
品牌: STMicroelectronics
組裝國家: Not Available
擴散國: Not Available
原產國: CN
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 4.430 g
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.