STMicroelectronics MDmesh MOSFET

結果: 9
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
STMicroelectronics MOSFET N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package 2,974庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 85 mOhms - 25 V, 25 V 3.25 V 44.3 nC - 55 C + 150 C 208 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package 1,103庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 5 A 2.9 Ohms - 30 V, 30 V 3 V 37 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package 427庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3.25 V 33.4 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea 596庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 68 A 40 mOhms - 25 V, 25 V 4.75 V 125 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-247 package 1,049庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 190 mOhms - 25 V, 25 V 3.25 V 23 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in 447庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 50 mOhms - 25 V, 25 V 3 V 120 nC - 55 C + 150 C 446 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET 16庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 69 mOhms - 25 V, 25 V 3.25 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 93 mOhm typ., 32 A MDmesh DM2 Power MOSFET in a D2PAK package 無庫存前置作業時間 16 週
最少: 1
倍數: 1
: 1,000

Si Through Hole D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 28 A 94 mOhms - 25 V, 25 V 3 V 56.3 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 package 無庫存前置作業時間 18 週
最少: 600
倍數: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 69 mOhms - 25 V, 25 V 3.25 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube