STGWA75H65DFB2

STMicroelectronics
511-STGWA75H65DFB2
STGWA75H65DFB2

製造商:

說明:
IGBT Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long

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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
14 週 工廠預計生產時間。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$42.50 HK$42.50
HK$23.84 HK$238.40
HK$16.69 HK$1,669.00
HK$15.70 HK$9,420.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
115 A
375 W
- 55 C
+ 175 C
Tube
品牌: STMicroelectronics
柵射極漏電電流: 250 nA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 6.100 g
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

STGWA75H65DFB2 HB2 IGBT

STMicroelectronics STGWA75H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA75H65DFB2 HB2 IGBT features a low VCE(sat) of 1.55V (typical) at an IC of 75A.