STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

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STMicroelectronics 碳化矽肖特基二極管 650 V, 4A power Schottky High Surge silicon carbide diode 2,480庫存量
最少: 1
倍數: 1
: 5,000

SMD/SMT SMBF-2 Single 10 A 650 V 1.3 V 30 A 4 uA - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics 碳化矽肖特基二極管 Automotive 650 V, 4A power Schottky High Surge silicon carbide diode
5,000預期12/3/2026
最少: 1
倍數: 1
: 5,000

SMD/SMT SMBF-2 Single 10 A 650 V 1.3 V 30 A 4 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel