Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝
STMicroelectronics MOSFET N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3 43,907庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-3.3x3.3-8 N-Channel 1 Channel 100 V 35 A 17 mOhms - 20 V, 20 V 2.5 V 25 nC - 55 C + 150 C 50 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3 4,033庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-3.3x3.3-8 N-Channel 1 Channel 100 V 7 A 35 mOhms - 20 V, 20 V 4.5 V 14 nC - 55 C + 150 C 2.9 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3 923庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT PowerFLAT-3.3x3.3-8 N-Channel 1 Channel 100 V 4.5 A 70 mOhms - 20 V, 20 V 4.5 V 7.8 nC - 55 C + 150 C 2.9 W Enhancement STripFET Reel, Cut Tape, MouseReel