SCT070W120G3-4

Name: STMicroelectronics SCT070W120G3-4
Brand: STMicroelectronics
SKU: 511-SCT070W120G3-4
Price: 89.84 HKD
Availability: OutOfStock

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Mouser 編號：

511-SCT070W120G3-4

製造商編號：

SCT070W120G3-4

製造商：

STMicroelectronics

說明：

碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

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規格書:

SCT070W120G3-4 規格書 (PDF)

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工廠前置作業時間：: 17 週工廠預計生產時間。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

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Pricing (HKD)

數量	單價	總價
	HK$89.84	HK$89.84
	HK$53.68	HK$536.80
	HK$45.70	HK$4,570.00
	HK$42.58	HK$21,290.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	Through Hole
封裝/外殼:	HiP247-4
晶體管極性:	N-Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	30 A
Rds On - 漏-源電阻:	87 mOhms
Vgs - 閘極-源極電壓:	- 10 V, + 22 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	41 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 200 C
Pd - 功率消耗 :	236 W
通道模式:	Enhancement
品牌:	STMicroelectronics
配置:	Single
下降時間:	17 ns
封裝:	Tube
產品:	SiC MOSFETS
產品類型:	SiC MOSFETS
上升時間:	4.8 ns
原廠包裝數量:	1
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	23 ns
標準開啟延遲時間:	9.5 ns

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規格書

SCT070W120G3-4 規格書 (PDF)

PCN

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.