N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

結果: 5
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 封裝
ROHM Semiconductor MOSFET Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive 2,465庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 40 V 80 A 2.2 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 175 C 142 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive 2,500庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 40 V 80 A 3.1 mOhms - 20 V, 20 V 2.5 V 41 nC - 55 C + 175 C 96 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET Nch 100V 59A, TO-252 (DPAK), Power MOSFET for Automotive 2,480庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 100 V 59 A 15.8 mOhms - 20 V, 20 V 2.5 V 17.3 nC - 55 C + 175 C 76 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET Nch 60V 40A, TO-252 (DPAK), Power MOSFET for Automotive 2,180庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 60 V 40 A 13.6 mOhms - 20 V, 20 V 4 V 12.1 nC - 55 C + 175 C 53 W Enhancement Reel, Cut Tape
ROHM Semiconductor MOSFET Nch 100V 36A, TO-252 (DPAK), Power MOSFET for Automotive 2,353庫存量
最少: 1
倍數: 1
: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 100 V 36 A 30 mOhms - 20 V, 20 V 2.5 V 9.1 nC - 55 C + 175 C 53 W Enhancement Reel, Cut Tape