Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

結果: 10
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 配置 If - 順向電流 Vrrm - 重複反向電壓 Vf - 順向電壓 Ifsm - 順向浪湧電流 Ir - 反向電流 最高工作溫度 封裝
ROHM Semiconductor 碳化矽肖特基二極管 RECT 1.2KV 5A RDL SIC SKY 3,968庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 RECT 1.2KV 15A RDL SIC SKY 2,707庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen 6,417庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen 1,701庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 RECT 1.2KV 10A RDL SIC SKY 732庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 RECT 1.2KV 20A RDL SIC SKY 1,391庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen 770庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen 813庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen 1庫存量
最少: 1
倍數: 1

Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C Tube
ROHM Semiconductor 碳化矽肖特基二極管 SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen 無庫存前置作業時間 21 週

Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C Tube