80V & 100V Shield Gate Trench N-Channel MOSFETs

PANJIT 80V and 100V Shield Gate Trench (SGT) N-Channel MOSFETs feature a low RDS(ON) and a high switching speed. These devices offer low reverse transfer capacitance and utilize green molding compounds, as specified in the IEC 61249 standard. These PANJIT MV enhancement mode MOSFETs are lead-free and compliant with EU RoHS 2.0, and are 100% UIS/Rg tested. These devices are available in various low-profile packages that save space, including DFN3333S-8L, DFN5060-8L, DFN5060S-8L, TO-220AB-L, TO-252AA, TO-263, and TOLL. Typical applications include PD chargers, adapters, lighting, home appliances, and DC-DC converters. 

結果: 2
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 晶體管極性 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 通道模式 封裝
Panjit MOSFET 100V 1.5mohms TOLL for ESS BBU LEV application 無庫存前置作業時間 24 週
最少: 2,000
倍數: 2,000
: 2,000

Si N-Channel 100 V 395 A 1.5 mOhms - 20 V, 20 V 3.8 V 128 nC Reel
Panjit MOSFET 100V 2.8mohms TOLL for Industrail market 無庫存前置作業時間 24 週
最少: 2,000
倍數: 2,000
: 2,000

Si N-Channel 100 V 240 A 2.8 mOhms - 20 V, 20 V 3.8 V 65 nC Enhancement Reel