FGY60T120SWD

onsemi
863-FGY60T120SWD
FGY60T120SWD

製造商:

說明:
IGBT 1200V, 60A Field Stop VII (FS7) Discrete IGBT

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 510

庫存:
510 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$63.71 HK$63.71
HK$37.07 HK$370.70
HK$31.15 HK$3,115.00
HK$31.07 HK$13,981.50

商品屬性 屬性值 選擇屬性
onsemi
產品類型: IGBT
RoHS:  
Si
TO-247-3LD
Through Hole
Single
1.2 kV
2.25 V
- 20 V, 20 V
105 A
635 W
- 55 C
+ 175 C
FGY60T120SWD
Tube
品牌: onsemi
集電極最大連續電流Ic : 105 A
組裝國家: Not Available
擴散國: Not Available
原產國: CN
產品類型: IGBT Transistors
原廠包裝數量: 450
子類別: IGBTs
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所選屬性: 0

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT

onsemi FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT (Insulated Gate Bipolar Transistor) features a robust and cost effective Ultra Field Stop Trench construction. The FGY60T120SQDN provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The FGY60T120SQDN also features an integrated soft and fast co-packaged free wheeling diode with a low forward voltage for fast recovery.