G3F60MT06J-TR

GeneSiC Semiconductor
905-G3F60MT06J-TR
G3F60MT06J-TR

製造商:

說明:
碳化矽MOSFET 650V 55mohm TO-263-7 G3F SiC MOSFET

壽命週期:
新產品:
該製造商的新產品。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 755

庫存:
755 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$48.58 HK$48.58
HK$44.14 HK$441.40
HK$42.50 HK$1,062.50
HK$40.11 HK$4,011.00
HK$38.63 HK$9,657.50
HK$37.48 HK$18,740.00
完整捲(訂購多個800)
HK$36.41 HK$29,128.00
HK$35.02 HK$84,048.00
4,800 報價

商品屬性 屬性值 選擇屬性
Navitas Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
品牌: GeneSiC Semiconductor
組裝國家: Not Available
擴散國: Not Available
原產國: US
封裝: Reel
封裝: Cut Tape
產品類型: SiC MOSFETS
系列: G3F
原廠包裝數量: 800
子類別: Transistors
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

650V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density, demanded by various applications. These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 650V SiC MOSFETs offer the best-in-class 20mΩ to 55mΩ low on-resistance range. These MOSFETs feature a peak efficiency above 97% at 137W/inch³ power density. The 650V SiC MOSFETs come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package. Typical applications include AI data center power supplies, EV charging, energy storage systems, and solar solutions.