TCR2LN11,LF
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Pricing (HKD)
| 數量 | 單價 |
總價
|
|---|---|---|
| 完整捲(訂購多個10000) | ||
| HK$0.617 | HK$6,170.00 | |
規格書
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Improving the Load Transient Response of LDOs
- LDO Regulator Application to Power Supplies for High-Frequency Circuits
- LDO Regulator Application to Power Supply Circuits for Digital Cores of CMOS Image Sensors
- LDO Regulator Application to Power Supply Circuits for MCUs
- LDO Regulators Glossary
- Low Drop-Out (LDO) Regulator IC
- Mechanism of LDO Oscillation and Reducing the Susceptibility to Oscillation
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power Efficiency Optimization
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Thermal Design to Maximize the Performance of LDO Regulators
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8542390000
- CAHTS:
- 8542390000
- USHTS:
- 8542390090
- JPHTS:
- 854239099
- MXHTS:
- 8542399901
- ECCN:
- EAR99
香港
