CoolSiC™ 400V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.

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說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
1,276庫存量
最少： 1
倍數： 1
捲: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 111 A 19.1 mOhms - 10 V, + 25 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
996庫存量
最少： 1
倍數： 1
捲: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 144 A 16.3 mOhms - 10 V, + 25 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
1,382庫存量
最少： 1
倍數： 1
捲: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 68 A 32.1 mOhms - 10 V, + 25 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
1,950庫存量
最少： 1
倍數： 1
捲: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 50 A 52.5 mOhms - 10 V, + 25 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
規格書
1,850庫存量
最少： 1
倍數： 1
捲: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 400 V 43 A 64.5 mOhms - 10 V, + 25 V 4.5 V 21 nC - 55 C + 175 C 150 W Enhancement