UF3C170400B7S

onsemi
431-UF3C170400B7S
UF3C170400B7S

製造商：

說明：
碳化矽MOSFET 1700V/400MOSICFETG3TO2

規格書:
ECAD模型:
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庫存量: 1,341

庫存：
1,341 可立即送貨
工廠前置作業時間：
20 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個800）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$86.89 HK$86.89
HK$60.33 HK$603.30
HK$50.22 HK$5,022.00
HK$48.33 HK$24,165.00
完整捲（訂購多個800）
HK$46.85 HK$37,480.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.7 kV
7.6 A
410 mOhms
- 25 V, + 25 V
6 V
23.1 nC
- 55 C
+ 175 C
100 W
Enhancement
SiC FET
品牌: onsemi
配置: Single
下降時間: 27.5 ns
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品類型: SiC MOSFETS
上升時間: 16 ns
系列: UF3C
原廠包裝數量: 800
子類別: Transistors
技術: SiC
標準斷開延遲時間: 102 ns
標準開啟延遲時間: 43 ns
找到產品:
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所選屬性: 0

規格書

PCN

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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