TK190A65Z,S4X
影像僅供參考
請參閱產品規格
請參閱產品規格
757-TK190A65ZS4X
TK190A65Z,S4X
製造商：
說明：
MOSFET MOSFET 650V 190mOhms DTMOS-VI
MOSFET MOSFET 650V 190mOhms DTMOS-VI
庫存量: 96
-
庫存：
-
96 可立即送貨發生意外錯誤了。請稍後再試。
-
工廠前置作業時間：
-
20 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (HKD)
| 數量 | 單價 |
總價
|
|---|---|---|
| HK$34.52 | HK$34.52 | |
| HK$17.76 | HK$177.60 | |
| HK$15.62 | HK$1,562.00 | |
| HK$13.15 | HK$6,575.00 | |
| HK$12.33 | HK$12,330.00 |
規格書
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
