TJ30S06M3L,LXHQ
影像僅供參考
請參閱產品規格
請參閱產品規格
757-TJ30S06M3L,LXHQ
TJ30S06M3L,LXHQ
製造商：
說明：
MOSFET 68W 1MHz Automotive; AEC-Q101
MOSFET 68W 1MHz Automotive; AEC-Q101
庫存量: 3,902
-
庫存：
-
3,902 可立即送貨發生意外錯誤了。請稍後再試。
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工廠前置作業時間：
-
4 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (HKD)
| 數量 | 單價 |
總價
|
|---|---|---|
| HK$12.99 | HK$12.99 | |
| HK$8.71 | HK$87.10 | |
| HK$6.08 | HK$608.00 | |
| HK$4.80 | HK$2,400.00 | |
| HK$4.39 | HK$4,390.00 | |
| 完整捲（訂購多個2000） | ||
| HK$3.91 | HK$7,820.00 | |
| HK$3.55 | HK$14,200.00 | |
規格書
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2