TGF2023-2-20

Qorvo
772-TGF2023-2-20
TGF2023-2-20

製造商：

說明：
氮化鎵場效應管 DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB

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此產品可能需要額外文件才能出口至美國境外。

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庫存：
暫無庫存
工廠前置作業時間：
20 週 工廠預計生產時間。
最少： 50   多個： 50
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$2,013.65 HK$100,682.50

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: 氮化鎵場效應管
付運限制：
 此產品可能需要額外文件才能出口至美國境外。
RoHS:  
Die
N-Channel
品牌: Qorvo
封裝: Gel Pack
產品: RF JFET Transistors
產品類型: GaN FETs
系列: TGF2023
原廠包裝數量: 50
子類別: Transistors
技術: GaN-on-SiC
晶體管類型: GaN HEMT
類型: GaN SiC HEMT
零件號別名: TGF2023 1099955
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所選屬性: 0 

                        
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5-0810-13

規格書

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CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8542390090
JPHTS:
8542330996
KRHTS:
8532331000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
3A001.b.3.b.4

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF2023 GaN HEMT Transistors

Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

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