TGF2023-2-01

Qorvo
772-TGF2023-2-01
TGF2023-2-01

製造商：

說明：
氮化鎵場效應管 DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB

壽命週期:
NRND:
不建議用於新設計。
規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於Qorvo TGF2023-2-01的資訊

供貨情況

庫存：
0

您仍可購買此商品作為延期交貨訂單。

工廠前置作業時間：
16 週 工廠預計生產時間。
最少： 50   多個： 50
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$354.53 HK$17,726.50
HK$332.42 HK$33,242.00

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: 氮化鎵場效應管
RoHS:  
Die
N-Channel
品牌: Qorvo
增益: 18 dB
最大工作頻率: 18 GHz
最低工作頻率: 0 Hz
輸出功率: 6 W
封裝: Gel Pack
產品: RF JFET Transistors
產品類型: GaN FETs
系列: TGF2023
原廠包裝數量: 50
子類別: Transistors
技術: GaN-on-SiC
晶體管類型: GaN HEMT
類型: GaN SiC HEMT
零件號別名: 1099624
每件重量: 739.600 mg
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0 

                        
Qorvo Die products:

Mouser is not authorized to break pack on these products.

Please contact your Mouser Technical Representative for further
information.



5-0810-13

規格書

此功能需要啟用JavaScript。

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541290065
JPHTS:
8541210101
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99

GaN Solutions

Qorvo is your smart RF partner for building solutions using Gallium Nitride (GaN) technology. No longer a technology just for defense and aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT, and defense communications. Qorvo provides proven, record-setting GaN circuit reliability and compact, high-efficiency products. This paves the way for more robust performance, lower operating costs and longer operational lifetimes.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF2023 GaN HEMT Transistors

Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。