T2G6000528-Q3 28V

Qorvo
772-T2G6000528-Q328V
T2G6000528-Q3 28V

製造商:

說明:
氮化鎵場效應管 DC-6.0GHz 10 Watt 28V GaN

ECAD模型:
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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
20 週 工廠預計生產時間。
最少: 100   多個: 100
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$560.85 HK$56,085.00

商品屬性 屬性值 選擇屬性
Qorvo
產品類型: 氮化鎵場效應管
RoHS:  
品牌: Qorvo
最大工作頻率: 6 GHz
最低工作頻率: 0 Hz
濕度敏感: Yes
輸出功率: 7 W
封裝: Tray
產品類型: GaN FETs
系列: T2G6000528
原廠包裝數量: 100
子類別: Transistors
技術: GaN
晶體管類型: HEMT
零件號別名: 1099997
每件重量: 4.382 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8532331000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

T2G GaN HEMT Transistors

Qorvo T2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.