STL13N60M6

STMicroelectronics
511-STL13N60M6
STL13N60M6

製造商:

說明:
MOSFET N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,800

庫存:
2,800 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
數量超過2800會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$21.37 HK$21.37
HK$13.65 HK$136.50
HK$9.29 HK$929.00
HK$7.61 HK$3,805.00
HK$6.86 HK$6,860.00
完整捲(訂購多個3000)
HK$5.98 HK$17,940.00
HK$5.90 HK$35,400.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
PowerFLAT-5x6-4
N-Channel
1 Channel
600 V
7 A
415 mOhms
- 25 V, 25 V
3.25 V
13 nC
- 55 C
+ 150 C
52 W
Enhancement
MDmesh
Reel
Cut Tape
品牌: STMicroelectronics
配置: Single
下降時間: 9.4 ns
產品類型: MOSFETs
上升時間: 6.5 ns
系列: Mdmesh M6
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 25.5 ns
標準開啟延遲時間: 15.8 ns
每件重量: 76 mg
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

MDmesh™ M6 MOSFET

STMicroelectronics MDmesh™ M6 MOSFET結合低閘極電荷(Qg)與優化電容尺寸,為電源轉換應用中的新拓撲結構提供高效率。超級接面MDmesh M6系列提供極高效性能,為高頻率運行帶來更高電源密度及低閘極電荷。M6系列MOSFET具有600至700V的擊穿電壓,並具有豐富的封裝選項,包括TO無鉛(TO-LL)封裝解決方案,可實現高效的熱管理。這些裝置具有適用於工業應用的多種運行電壓,包括充電器、適配器、銀盒模組、LED照明、電訊、伺服器及太陽能。

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.