STGYA120M65DF2

STMicroelectronics
511-STGYA120M65DF2
STGYA120M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Max247-3
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
160 A
625 W
- 55 C
+ 175 C
STGYA120M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 160 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 4.430 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

In Stock: 361

Stock:
361 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
HK$-.--
Ext. Price:
HK$-.--
Est. Tariff:

Pricing (HKD)

Qty. Unit Price
Ext. Price
HK$87.46 HK$87.46
HK$46.77 HK$467.70
HK$38.22 HK$3,822.00
HK$37.98 HK$22,788.00
3,000 Quote

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