STGYA120M65DF2

STMicroelectronics
511-STGYA120M65DF2
STGYA120M65DF2

製造商:

說明:
IGBT Trench gate field-stop IGBT, M series 650 V, 120 A low loss

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 380

庫存:
380 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$75.71 HK$75.71
HK$44.39 HK$443.90
HK$38.06 HK$3,806.00
HK$37.98 HK$22,788.00
25,200 報價

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
Max247-3
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
160 A
625 W
- 55 C
+ 175 C
STGYA120M65DF2
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 160 A
柵射極漏電電流: +/- 250 uA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 4.430 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.