STGWA50M65DF2

STMicroelectronics
511-STGWA50M65DF2
STGWA50M65DF2

製造商:

說明:
IGBT Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 692

庫存:
692 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$43.65 HK$43.65
HK$24.99 HK$249.90
HK$17.59 HK$1,759.00
HK$16.60 HK$9,960.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
80 A
375 W
- 55 C
+ 175 C
HB2
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 80 A
柵射極漏電電流: +/- 250 uA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 6 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.