STGP30M65DF2

STMicroelectronics
511-STGP30M65DF2
STGP30M65DF2

製造商:

說明:
IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 980

庫存:
980 可立即送貨
工廠前置作業時間:
15 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$26.14 HK$26.14
HK$11.84 HK$118.40
HK$10.85 HK$1,085.00
HK$9.54 HK$4,770.00
HK$8.80 HK$8,800.00
HK$8.22 HK$16,440.00
HK$8.14 HK$40,700.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
60 A
258 W
- 55 C
+ 175 C
STGP30M65DF2
Tube
品牌: STMicroelectronics
產品類型: IGBT Transistors
原廠包裝數量: 1000
子類別: IGBTs
每件重量: 2 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.