STGD6M65DF2

STMicroelectronics
511-STGD6M65DF2
STGD6M65DF2

製造商:

說明:
IGBT Trench gate field-stop IGBT, M series 650 V, 6 A low loss

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
DPAK-3 (TO-252-3)
SMD/SMT
Single
650 V
1.55 V
- 20 V, 20 V
12 A
88 W
- 55 C
+ 175 C
STGD6M65DF2
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
集電極最大連續電流Ic : 12 A
柵射極漏電電流: 250 uA
產品類型: IGBTs
原廠包裝數量: 2500
子類別: Transistors
每件重量: 330 mg
找到產品:
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所選屬性: 0

合規守則
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
原產地分類
原產國:
中國
封裝原產國:
無資料
擴散國:
無資料
出貨時,國家可能會有所變更。

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

庫存量: 2,043

庫存:
2,043
可立即送貨
在途量:
2,500
預期18/6/2027
工廠前置作業時間:
20
週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$16.36 HK$16.36
HK$10.28 HK$102.80
HK$6.76 HK$676.00
HK$5.36 HK$2,680.00
HK$5.12 HK$5,120.00
完整捲(訂購多個2500)
HK$4.36 HK$10,900.00
HK$4.18 HK$20,900.00
HK$4.09 HK$40,900.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩