SSM3K357R,LF

Toshiba
757-SSM3K357RLF
SSM3K357R,LF

製造商：

說明：
MOSFET LowON Res MOSFET ID=.65A VDSS=60V

規格書:
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庫存量: 5,546

庫存：
5,546
可立即送貨
在途量:
6,000
預期25/6/2026
工廠前置作業時間：
16
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$4.27 HK$4.27
HK$2.64 HK$26.40
HK$1.69 HK$169.00
HK$1.27 HK$635.00
HK$1.13 HK$1,130.00
完整捲（訂購多個3000）
HK$0.929 HK$2,787.00
HK$0.847 HK$5,082.00
HK$0.764 HK$6,876.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Toshiba
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
SOT-23F-3
N-Channel
1 Channel
60 V
650 mA
1.8 Ohms
- 12 V, 12 V
1.3 V
1.5 nC
- 55 C
+ 150 C
1.5 W
Enhancement
AEC-Q101
MOSV
Reel
Cut Tape
MouseReel
品牌: Toshiba
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: TH
互導 - 最小值: 500 mS
產品類型: MOSFETs
系列: SSM3K357R
原廠包裝數量: 3000
子類別: Transistors
標準斷開延遲時間: 3000 ns
標準開啟延遲時間: 990 ns
每件重量: 11 mg
找到產品:
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所選屬性: 0 

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs

Toshiba SSM6N357R and SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel components designed for relay driver applications. The SSM6N357R,LF comes with two channels, whereas the SSM3K357R,LF comes with a single channel. These AEC-Q101-qualified MOSFETs feature a 3V gate drive voltage, built-in internal Zener diodes/resistors, and a 2kV class Human Body Model (HBM) ESD rating. The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, +150°C maximum channel temperature, and 12.6mJ single-pulse avalanche energy.

SSM3 High Current MOSFETs

Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches. 

MOSV MOSFETs

Toshiba MOSV MOSFETs are N-channel MOSFETs offered in logic-level gate drive and low-voltage gate drive variants. These Toshiba devices provide a drain-source breakdown voltage (VDS) range from 50V to 60V and a gate-source voltage (VGS) range from 4V to 20V. Toshiba MOSV MOSFETs are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.

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