SSM3J378R,LF

Name: Toshiba SSM3J378R,LF
Brand: Toshiba
SKU: 757-SSM3J378RLF
Price: 3.29 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

757-SSM3J378RLF

製造商編號：

SSM3J378R,LF

製造商：

Toshiba

說明：

MOSFET Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-6A

規格書:

SSM3J378R,LF 規格書 (PDF)

ECAD模型:

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更多資訊

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庫存量: 5,790

庫存：: 5,790 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 16 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$3.29	HK$3.29
	HK$2.04	HK$20.40
	HK$1.28	HK$128.00
	HK$0.962	HK$481.00
	HK$0.789	HK$789.00
完整捲（訂購多個3000）
	HK$0.617	HK$1,851.00
	HK$0.592	HK$3,552.00
	HK$0.477	HK$4,293.00
	HK$0.46	HK$11,040.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Toshiba
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	SOT-23F-3
晶體管極性:	P-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	20 V
Id - C連續漏極電流:	6 A
Rds On - 漏-源電阻:	29.8 mOhms
Vgs - 閘極-源極電壓:	- 8 V, 6 V
Vgs th - 門源門限電壓 :	1 V
Qg - 閘極充電:	12.8 nC
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	2 W
通道模式:	Enhancement
資格:	AEC-Q101
公司名稱:	U-MOSVI
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Toshiba
配置:	Single
互導 - 最小值:	4.5 S
產品類型:	MOSFETs
系列:	SSM3J378R
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 P-Channel
標準斷開延遲時間:	107 ns
標準開啟延遲時間:	32 ns
每件重量:	11 mg

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所選屬性: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

篩選文檔:

規格書

SSM3J378R,LF 規格書 (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.