SIZ998DT-T1-GE3

Vishay Semiconductors
78-SIZ998DT-T1-GE3
SIZ998DT-T1-GE3

製造商：

說明：
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5

規格書:
ECAD模型:
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庫存量: 6,683

庫存：
6,683 可立即送貨
工廠前置作業時間：
3 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$17.18 HK$17.18
HK$11.01 HK$110.10
HK$7.42 HK$742.00
HK$5.90 HK$2,950.00
HK$5.50 HK$5,500.00
完整捲（訂購多個3000）
HK$4.79 HK$14,370.00
HK$4.57 HK$27,420.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Vishay
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PowerPAIR-6x5-8
N-Channel
2 Channel
30 V
20 A, 60 A
4.7 mOhms, 2.2 mOhms
- 16 V, 20 V
1.1 V
18 nC, 44.3 nC
- 55 C
+ 150 C
20.2 W, 32.9 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
品牌: Vishay Semiconductors
配置: Dual
下降時間: 10 ns, 10 ns
互導 - 最小值: 80 S, 165 S
產品類型: MOSFETs
上升時間: 65 ns, 65 ns
系列: SIZ
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 2 N-Channel
標準斷開延遲時間: 10 ns, 17 ns
標準開啟延遲時間: 15 ns, 25 ns
每件重量: 337.318 mg
找到產品:
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所選屬性: 0

CNHTS:
8541290000
TARIC:
8541210000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

SkyFET® Power MOSFETs

Vishay / Siliconix SkyFET® Power MOSFETs integrate a MOSFET and a Schottky diode and are ideal for increasing efficiency at light loads and higher frequencies to reduce power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Other features include increased efficiency for DC-DC converter applications, reduced space by eliminating external Schottky diodes, low-side switch for synchronous rectification, and reduced power losses linked to the body diode of the MOSFET. Typical applications for Vishay / Siliconix SkyFET Power MOSFETs include point of load (PoL), synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Dual N-Channel TrenchFET® Power MOSFETs

Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.

整合式MOSFET解決方案

Vishay整合式MOSFET解決方案將多項元件整合至單一晶片，使其擁有更高的功率密度和效率，設計更簡化，而且還能減少材料清單 (BOM) 成本。這些單晶和多晶MOSFET整合了蕭特基二極體與ESD防護等功能。這些MOSFET具備低導通電阻的N和P通道TrenchFET®技術，以及低熱阻。

PowerPAIR®雙重MOSFET

Vishay PowerPAIR®雙重MOSFET結合經過最佳化的MOSFET組合，整合至同一個尺寸小巧的封裝內。共同封裝的PowerPAIR雙重MOSFET比起分開的獨立裝置，佔用空間更少，效能更出色。本裝置將兩個MOSFET結合放入PowerPAIR封裝內，配置更為簡單，可減少來自PCB走線的寄生電感，進而提高效率。 

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET第四代MOSFET

Vishay / Siliconix TrenchFET®第四代MOSFET是下一代TrenchFET®系列功率MOSFET。TrenchFET第四代MOSFET在PowerPAK® SO-8及1212-8S封裝中提供工業低電阻與低柵極總電荷。這些TrenchFET第四代MOSFET具有極低的RDS(on)特性，轉化為更低的傳導損耗，從而降低功耗。TrenchFET MOSFET還配備了節省空間的PowerPAK® 1212-8封裝，具有類似的效率，但體積只有它的三分之一。典型應用包括大功率DC/DC變換器、同步整流、太陽能微型逆變器及電機驅動開關。

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