SISF00DN-T1-GE3

Vishay Semiconductors
78-SISF00DN-T1-GE3
SISF00DN-T1-GE3

製造商:

說明:
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 15,979

庫存:
15,979 可立即送貨
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個3000)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$16.60 HK$16.60
HK$10.60 HK$106.00
HK$7.16 HK$716.00
HK$5.69 HK$2,845.00
HK$5.24 HK$5,240.00
完整捲(訂購多個3000)
HK$4.61 HK$13,830.00
HK$4.59 HK$27,540.00
24,000 報價
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Vishay
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PowerPAK-1212-8SCD-8
N-Channel
2 Channel
30 V
60 A
4.2 mOhms
- 16 V, 20 V
2.1 V
53 nC
- 55 C
+ 150 C
69.4 W
Enhancement
TrenchFET, PowerPAK
Reel
Cut Tape
MouseReel
品牌: Vishay Semiconductors
配置: Dual
下降時間: 10 ns
互導 - 最小值: 130 S
產品類型: MOSFETs
上升時間: 32 ns
系列: SISF
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 2 N-Channel
標準斷開延遲時間: 22 ns
標準開啟延遲時間: 10 ns
每件重量: 488.500 mg
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

整合式MOSFET解決方案

Vishay整合式MOSFET解決方案將多項元件整合至單一晶片,使其擁有更高的功率密度和效率,設計更簡化,而且還能減少材料清單 (BOM) 成本。這些單晶和多晶MOSFET整合了蕭特基二極體與ESD防護等功能。這些MOSFET具備低導通電阻的N和P通道TrenchFET®技術,以及低熱阻。

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

TrenchFET第四代MOSFET

Vishay / Siliconix TrenchFET®第四代MOSFET是下一代TrenchFET®系列功率MOSFET。TrenchFET第四代MOSFET在PowerPAK® SO-8及1212-8S封裝中提供工業低電阻與低柵極總電荷。這些TrenchFET第四代MOSFET具有極低的RDS(on)特性,轉化為更低的傳導損耗,從而降低功耗。TrenchFET MOSFET還配備了節省空間的PowerPAK® 1212-8封裝,具有類似的效率,但體積只有它的三分之一。典型應用包括大功率DC/DC變換器、同步整流、太陽能微型逆變器及電機驅動開關。