SI8483DB-T2-E1

Vishay Semiconductors
78-SI8483DB-T2-E1
SI8483DB-T2-E1

製造商：

說明：
MOSFET -12V Vds 10V Vgs MICRO FOOT 1.5 x 1

規格書:
ECAD模型:
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庫存量: 32,414

庫存：
32,414 可立即送貨
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$5.43 HK$5.43
HK$3.46 HK$34.60
HK$2.38 HK$238.00
HK$1.89 HK$945.00
HK$1.73 HK$1,730.00
完整捲（訂購多個3000）
HK$1.39 HK$4,170.00
HK$1.35 HK$8,100.00
HK$1.30 HK$11,700.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Vishay
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
MicroFoot-6
P-Channel
1 Channel
12 V
16 A
22 mOhms
- 10 V, 10 V
800 mV
65 nC
- 55 C
+ 150 C
13 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
品牌: Vishay Semiconductors
配置: Single
下降時間: 10 ns
互導 - 最小值: 10 S
產品類型: MOSFETs
上升時間: 25 ns
系列: SI8
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 P-Channel
標準斷開延遲時間: 40 ns
標準開啟延遲時間: 20 ns
每件重量: 128.380 mg
找到產品:
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所選屬性: 0

CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

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