SCT4013DRC15

ROHM Semiconductor
755-SCT4013DRC15
SCT4013DRC15

製造商：

說明：
碳化矽MOSFET TO247 750V 105A N-CH SIC

規格書:
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庫存量: 402

庫存：
402 可立即送貨
工廠前置作業時間：
27 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$285.73 HK$285.73
HK$217.99 HK$2,179.90
HK$210.43 HK$21,043.00
HK$210.27 HK$94,621.50
900 報價

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
750 V
105 A
16.9 mOhms
- 4 V, + 21 V
4.8 V
170 nC
+ 175 C
312 W
Enhancement
品牌: ROHM Semiconductor
配置: Single
下降時間: 17 ns
互導 - 最小值: 32 S
封裝: Tube
產品: MOSFET's
產品類型: SiC MOSFETS
上升時間: 32 ns
原廠包裝數量: 450
子類別: Transistors
技術: SiC
晶體管類型: 1 N-Channel
標準斷開延遲時間: 82 ns
標準開啟延遲時間: 17 ns
零件號別名: SCT4013DR
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所選屬性: 0

規格書

Specification Sheets

此功能需要啟用JavaScript。

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

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