SCS220AE2HRC11

Name: ROHM Semiconductor SCS220AE2HRC11
Brand: ROHM Semiconductor
SKU: 755-SCS220AE2HRC11
Price: 88.94 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

755-SCS220AE2HRC11

製造商編號：

SCS220AE2HRC11

製造商：

ROHM Semiconductor

說明：

碳化矽肖特基二極管 AECQ

規格書:

SCS220AE2HRC11 規格書 (PDF)

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商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	碳化矽肖特基二極管
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247N-3
配置:	Dual
If - 順向電流:	20 A
Vrrm - 重複反向電壓:	650 V
Vf - 順向電壓:	1.55 V
Ifsm - 順向浪湧電流:	76 A
Ir - 反向電流:	200 uA
最高工作溫度:	+ 175 C
Vr - 反向電壓:	650 V
資格:	AEC-Q101
封裝:	Tube
品牌:	ROHM Semiconductor
Pd - 功率消耗 :	160 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	450
子類別:	Diodes & Rectifiers
零件號別名:	SCS220AE2HR

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篩選文檔:

規格書

SCS220AE2HRC11 規格書 (PDF)

Specification Sheets

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合規守則

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

原產地分類

原產國:: 泰國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.