SBR1045CTL-13

Diodes Incorporated
621-SBR1045CTL-13
SBR1045CTL-13

製造商:

說明:
肖特基二極體及整流器 10A 45V STANDARD

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,524

庫存:
2,524 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$3.21 HK$3.21
完整捲(訂購多個2500)
HK$3.20 HK$8,000.00
HK$3.08 HK$15,400.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Diodes Incorporated
產品類型: 肖特基二極體及整流器
RoHS:  
REACH - SVHC:
Schottky Rectifiers
SMD/SMT
DPAK-3 (TO-252-3)
Dual Anode Common Cathode
Si
5 A
45 V
550 mV
90 A
500 uA
- 65 C
+ 150 C
SBR1045
Reel
Cut Tape
MouseReel
品牌: Diodes Incorporated
產品類型: Schottky Diodes & Rectifiers
原廠包裝數量: 2500
子類別: Diodes & Rectifiers
Vr - 反向電壓: 31 V
每件重量: 260.400 mg
找到產品:
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所選屬性: 0

CNHTS:
8504409190
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Automotive Super Barrier Rectifiers

Diodes Incorporated Automotive Super Barrier Rectifiers (SBR) are designed with patented Super Barrier Technology that provides superior avalanche capability. These Diodes Incorporated SBR rectifiers offer low forward voltage drop and are ideal for automotive applications. The automotive SBR diodes have a lead-free finish while qualified to the AEC-Q101 standard that delivers high reliability. These SBR rectifiers are available in 1A to 30A forward current range and 500mV to 0.7V forward voltage range.

SBR® Super Barrier Rectifiers

Diodes Inc SBR® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.