PJD50N15S-AU_L2_006A1

Name: Panjit PJD50N15S-AU_L2_006A1
Brand: Panjit
SKU: 241-PJD50N15SAUL26A1
Price: 9.21 HKD
Availability: OutOfStock

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Mouser 編號：

241-PJD50N15SAUL26A1

製造商編號：

PJD50N15S-AU_L2_006A1

製造商：

Panjit

說明：

MOSFET 150V N-Channel Enhancement Mode MOSFET

壽命週期:

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規格書:

PJD50N15S-AU_L2_006A1 規格書 (PDF)

ECAD模型:

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庫存：: 暫無庫存

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 20 週工廠預計生產時間。

輸入數量：

最少： 3000 多個： 3000

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

此產品免費航運

Pricing (HKD)

數量	單價	總價
完整捲（訂購多個3000）
	HK$9.21	HK$27,630.00

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商品屬性	屬性值	選擇屬性
製造商:	Panjit
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	TO-252AA-2
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	150 V
Id - C連續漏極電流:	65 A
Rds On - 漏-源電阻:	16 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	53 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	167 W
通道模式:	Enhancement
資格:	AEC-Q101
封裝:	Reel
品牌:	Panjit
配置:	Single
下降時間:	14 ns
產品類型:	MOSFETs
上升時間:	15 ns
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	37 ns
標準開啟延遲時間:	13 ns
零件號別名:	PJD50N15S
每件重量:	321.700 mg

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篩選文檔:

規格書

PJD50N15S-AU_L2_006A1 規格書 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

150V N-Channel Automotive MOSFETs

PANJIT 150V N-Channel Automotive MOSFETs are enhancement-mode MOSFETs optimized to have good Figure of Merit (FOM) and AEC-Q101 qualified with standard-level gate drive. These enhancement-mode automotive MOSFETs operate from 18A to 65A continuous drain current and are AEC-Q101 qualified devices. The 150V N-channel MOSFETs operate from -55°C to 175°C junction and storage temperature range. These N-channel MOSFETs feature green molding compounds that are compliant with the IEC 61249 standard and EU RoHS 2.0. The 150V N-channel MOSFETs are ideal for Battery Management System (BMS), Brushless Direct Current (BLDC), and Switch Mode Power Supply (SMPS) SR.

60/100/150V Automotive-Grade MOSFETs

PANJIT 60/100/150V Automotive-Grade MOSFETs are a family of 60V, 100V, and 150V AEC-Q101 qualified MOSFETs. The PANJIT 60/100/150V MOSFETs are designed with advanced trench technology for superior performance and efficiency. Ideal for automotive and industrial power systems, these MOSFETs offer an exceptional figure of merit (FOM), significantly lower R_DS(ON), and reduced capacitance. These features minimize conduction and switching losses for improved electrical performance. Available in compact packages like DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, and TO-220AB-L, these MOSFETs enable efficient design solutions for modern electronics.