NVMYS011N04CTWG

onsemi
863-NVMYS011N04CTWG
NVMYS011N04CTWG

製造商:

說明:
MOSFET 40V 0.9Ohm 322A Single N-Channel

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 3,000

庫存:
3,000 可立即送貨
工廠前置作業時間:
28 週 工廠預計生產時間數量大於所顯示的數量。
數量超過3000會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$6.74 HK$6.74
HK$6.51 HK$65.10
HK$4.61 HK$461.00
HK$3.67 HK$1,835.00
HK$3.33 HK$3,330.00
完整捲(訂購多個3000)
HK$2.70 HK$8,100.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
LFPAK-4
N-Channel
1 Channel
40 V
35 A
12 mOhms
- 20 V, 20 V
3.5 V
7.9 nC
- 55 C
+ 175 C
28 W
Enhancement
AEC-Q101
Reel
Cut Tape
品牌: onsemi
配置: Single
下降時間: 5 ns
互導 - 最小值: 111 S
產品類型: MOSFETs
上升時間: 16 ns
系列: NVMYS011N04C
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 16 ns
標準開啟延遲時間: 8 ns
每件重量: 75 mg
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.