NVH4L022N120M3S

onsemi
863-NVH4L022N120M3S
NVH4L022N120M3S

製造商:

說明:
碳化矽MOSFET SIC MOS TO247-4L 22MOHM 1200V

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 282

庫存:
282 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$239.37 HK$239.37
HK$198.60 HK$1,986.00
HK$189.88 HK$22,785.60
HK$189.80 HK$96,798.00
1,020 報價

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
68 A
30 mOhms
- 10 V, + 22 V
4.4 V
151 nC
- 55 C
+ 175 C
352 W
Enhancement
EliteSiC
品牌: onsemi
配置: Single
下降時間: 13 ns
互導 - 最小值: 34 S
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 24 ns
系列: NVH4L022N120M3S
原廠包裝數量: 30
子類別: Transistors
技術: SiC
標準斷開延遲時間: 48 ns
標準開啟延遲時間: 18 ns
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NVH4L022N120M3S Silicon Carbide (SiC) MOSFETs

ON Semiconductor NVH4L022N120M3S Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The ON Semiconductor NVH4L022N120M3S features low ON resistance and a compact chip size that ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

M3S 1200V SiC MOSFET

安森美 (onsemi) M3S 1200V碳化矽 (SiC) MOSFET針對快速切換應用最佳化。裝置採用平面技術,能在負閘極電壓驅動器及閘極的關斷突增下可靠運作。安森美M3S 1200V MOSFET以18V閘極驅動執行驅動時可提供最佳效能,但也適用於15V閘極驅動。M3S提供低切換耗損,採用TO247-4LD封裝,可實現低共源電感。