MSCSM120HM31CTBL2NG

Microchip Technology
579-SM120HM31CTBL2NG
MSCSM120HM31CTBL2NG

製造商:

說明:
離散半導體模組 PM-MOSFET-SIC-SBD-BL2

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
暫無庫存
工廠前置作業時間:
20 週 工廠預計生產時間。
最少: 3   多個: 3
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$1,784.32 HK$5,352.96

商品屬性 屬性值 選擇屬性
Microchip
產品類型: 離散半導體模組
RoHS:  
MOSFET-SiC SBD Modules
Full Bridge
SiC
1.5 V
1.2 kV
- 10 V, + 25 V
Screw Mount
- 55 C
+ 175 C
品牌: Microchip Technology
配置: Full Bridge
下降時間: 25 ns
Id - C連續漏極電流: 79 A
Pd - 功率消耗 : 310 W
產品類型: Discrete Semiconductor Modules
Rds On - 漏-源電阻: 31 mOhms
上升時間: 30 ns
原廠包裝數量: 1
子類別: Discrete Semiconductor Modules
晶體管極性: N-Channel
標準斷開延遲時間: 50 ns
標準開啟延遲時間: 30 ns
Vds - 漏-源擊穿電壓: 1.2 kV
Vgs th - 門源門限電壓 : 1.8 V
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所選屬性: 0

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USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

MSCSM120x MOSFET Power Modules

Microchip Technology MSCSM120x MOSFET Power Modules are high-efficiency converters that feature Si3N4 substrate with thick copper for improved thermal performance. These modules offer a low profile, direct mounting to the heatsink (isolated package), an internal thermistor for temperature monitoring, and an extended temperature range. The MSCSM120x modules operate at 1.2kV reverse voltage (VR), -10V to 25V gate-source voltage range (VGS), 310W/560W power dissipation (PD), and 79A/150A continuous drain current (ID). These modules are used in applications such as high-reliability power systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches.