MR4A08BCYS35

Everspin Technologies
936-MR4A08BCYS35
MR4A08BCYS35

製造商:

說明:
MRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 280

庫存:
280 可立即送貨
工廠前置作業時間:
27 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$493.20 HK$493.20
HK$455.47 HK$4,554.70
HK$440.67 HK$11,016.75
HK$429.66 HK$21,483.00
HK$414.29 HK$41,429.00
270 報價

商品屬性 屬性值 選擇屬性
Everspin Technologies
產品類型: MRAM
RoHS:  
TSOP-II-44
Parallel
16 Mbit
2 M x 8
8 bit
35 ns
3 V
3.6 V
60 mA, 152 mA
- 40 C
+ 85 C
MR4A08B
Tray
品牌: Everspin Technologies
濕度敏感: Yes
安裝風格: SMD/SMT
Pd - 功率消耗 : 600 mW
產品類型: MRAM
原廠包裝數量: 135
子類別: Memory & Data Storage
公司名稱: Parallel I/O (x8)
每件重量: 2.200 g
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所選屬性: 0

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CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.