MR2A08ACMA35

Everspin Technologies
936-MR2A08ACMA35
MR2A08ACMA35

製造商:

說明:
MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM

ECAD模型:
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庫存量: 600

庫存:
600 可立即送貨
工廠前置作業時間:
27 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$289.84 HK$289.84
HK$268.22 HK$2,682.20
HK$259.59 HK$6,489.75
HK$253.18 HK$12,659.00
HK$246.85 HK$24,685.00
HK$235.75 HK$58,937.50
HK$233.86 HK$81,383.28
2,784 報價

商品屬性 屬性值 選擇屬性
Everspin Technologies
產品類型: MRAM
RoHS:  
REACH - SVHC:
BGA-48
Parallel
4 Mbit
512 k x 8
8 bit
35 ns
3 V
3.6 V
30 mA, 90 mA
- 40 C
+ 85 C
MR2A08A
Tray
品牌: Everspin Technologies
濕度敏感: Yes
安裝風格: SMD/SMT
Pd - 功率消耗 : 600 mW
產品類型: MRAM
原廠包裝數量: 348
子類別: Memory & Data Storage
公司名稱: Parallel I/O (x8)
每件重量: 3 g
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所選屬性: 0

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CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.