MR25H128AMDF

Everspin Technologies
936-MR25H128AMDF
MR25H128AMDF

製造商:

說明:
MRAM 128Kb 3.3V 16Kx8 SPI

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 216

庫存:
216 可立即送貨
工廠前置作業時間:
27 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$118.12 HK$118.12
HK$109.74 HK$1,097.40
HK$106.37 HK$2,659.25
HK$105.79 HK$5,289.50
HK$89.84 HK$51,208.80

商品屬性 屬性值 選擇屬性
Everspin Technologies
產品類型: MRAM
RoHS:  
DFN-8
SPI
128 kbit
16 k x 8
8 bit
2.7 V
3.6 V
6 mA, 23 mA
- 40 C
+ 125 C
MR25H128A
Tray
品牌: Everspin Technologies
濕度敏感: Yes
安裝風格: SMD/SMT
Pd - 功率消耗 : 600 mW
產品類型: MRAM
原廠包裝數量: 570
子類別: Memory & Data Storage
公司名稱: Serial I/O (SPI)
每件重量: 5.163 g
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所選屬性: 0

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CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
MXHTS:
8542320299
ECCN:
EAR99

MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.