MR0A08BCMA35

Everspin Technologies
936-MR0A08BCMA35
MR0A08BCMA35

製造商：

說明：
MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM

規格書:
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庫存量: 472

庫存：
472 可立即送貨
工廠前置作業時間：
27 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$162.18 HK$162.18
HK$150.34 HK$1,503.40
HK$145.66 HK$3,641.50
HK$143.85 HK$7,192.50
1,044 報價

商品屬性 屬性值 選擇屬性
Everspin Technologies
產品類型: MRAM
RoHS:  
BGA-48
Parallel
1 Mbit
128 k x 8
8 bit
35 ns
3 V
3.6 V
25 mA, 55 mA
- 40 C
+ 85 C
MR0A08B
Tray
品牌: Everspin Technologies
濕度敏感: Yes
安裝風格: SMD/SMT
Pd - 功率消耗 : 600 mW
產品類型: MRAM
原廠包裝數量: 348
子類別: Memory & Data Storage
公司名稱: Parallel I/O (x8)
每件重量: 4.215 g
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所選屬性: 0

規格書

PCN

此功能需要啟用JavaScript。

CNHTS:
8542319090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

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