IS66WVC4M16EALL-7010BLI

ISSI
870-66WV4M16EA70BLI
IS66WVC4M16EALL-7010BLI

製造商:

說明:
SRAM Pseudo SRAM 64Mb

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,170

庫存:
2,170 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1   上限: 127
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$56.72 HK$56.72
HK$52.69 HK$526.90
HK$51.46 HK$1,286.50
HK$51.13 HK$2,556.50
HK$50.64 HK$5,064.00

商品屬性 屬性值 選擇屬性
ISSI
產品類型: SRAM
RoHS:  
64 Mbit
4 M x 16
70 ns
104 MHz
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
VFBGA-54
品牌: ISSI
濕度敏感: Yes
產品類型: SRAM
系列: IS66WVC4M16EALL
原廠包裝數量: 480
子類別: Memory & Data Storage
類型: PSRAM (Pseudo SRAM)
每件重量: 86 mg
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所選屬性: 0

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CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.